A wideband (3-13 GHz) 7-bit SiGe BiCMOS step attenuator with improved flatness

Kandiş, Hamza and Yazıcı, Melik and Gürbüz, Yaşar and Kaynak, Mehmet (2019) A wideband (3-13 GHz) 7-bit SiGe BiCMOS step attenuator with improved flatness. In: 18th Mediterranean Microwave Symposium (MMS), Istanbul, Turkey

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In this paper, a wideband (3-13 GHz) 7-bit digitally controlled attenuator designed with isolated NMOS is proposed. Flat attenuation states are generated by employing parallel capacitor for Pi type attenuation bits to compensate for the attenuation degradation in high frequencies for high attenuation bits. Also using isolated NMOS eliminates the internal parasitic capacitance effects of regular NMOS. The attenuator is designed in IHP 0.13um SiGe BiCMOS technology. The simulated RMS amplitude error is less than 0.17 dB and RMS phase error less than 2.8° over the whole frequency band. The precision of the attenuator is 0.25 dB whereas the attenuation range is 31.75 dB. The simulated insertion loss at the minimum attenuation level is -6.6 dB. The simulated input/output return losses of the designed attenuator are less than -9 dB over whole operating frequency. The simulated input/output losses are better than -10 dB between 4.6-13 GHz. The simulated input referred 1dB compression point is 16.8 dBm at 8 GHz. The dimensions of the designed attenuator are 1.592*0.793 mm 2 and area is 1.57 mm2.
Item Type: Papers in Conference Proceedings
Uncontrolled Keywords: Attenuator; transmitter / receiver; wideband; step attenuator; isolated NMOS
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering > TK7800-8360 Electronics
Divisions: Faculty of Engineering and Natural Sciences > Academic programs > Electronics
Faculty of Engineering and Natural Sciences
Depositing User: Melik Yazıcı
Date Deposited: 29 Jul 2019 15:23
Last Modified: 12 Jun 2023 11:28
URI: https://research.sabanciuniv.edu/id/eprint/37754

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