A high power handling capability CMOS T/R switch for x-band phased array antenna systems

Warning The system is temporarily closed to updates for reporting purpose.

Dinç, Tolga and Zihir, Samet and Taşdemir, Ferhat and Gürbüz, Yaşar (2011) A high power handling capability CMOS T/R switch for x-band phased array antenna systems. In: European Microwave Week 2011 (EuMW 2011) the European Microwave Integrated Circuits Conference (EuMIC), Manchester, UK (Accepted/In Press)

[thumbnail of 1422-LBBLDnFqQhJl-1.pdf] PDF
1422-LBBLDnFqQhJl-1.pdf

Download (607kB)

Abstract

This paper presents a single-pole double-throw (SPDT) transmit/receive (T/R) switch fabricated in 0.25-μm SiGe BiCMOS process for X-Band (8 – 12 GHz) phased array radar applications. The switch is based on series-shunt topology with combination of techniques to improve insertion loss (IL), isolation and power handling capability (P1dB). These techniques include optimization of transistor widths for lower insertion loss and parallel resonance technique to improve isolation. In addition, DC biasing of input and output ports, on-chip impedance transformation networks (ITN) and resistive body-floating are used to improve P1dB of the switch. All these design techniques resulted in a measured IL of 3.6 dB, isolation of 30.8 dB and P1dB of 28.2 dBm at 10 GHz. The return losses at both input and output ports are better than 16 dB from 8 to 12 GHz. To our knowledge, this work presents the highest P1dB at X-Band compared to other reported single-ended CMOS T/R switches in the literature.
Item Type: Papers in Conference Proceedings
Uncontrolled Keywords: T/R switch, SPDT switch, phased array radar, 0.25 μm CMOS, body-floating, DC biasing
Divisions: Faculty of Engineering and Natural Sciences > Academic programs > Electronics
Faculty of Engineering and Natural Sciences
Depositing User: Yaşar Gürbüz
Date Deposited: 29 Dec 2011 21:39
Last Modified: 26 Apr 2022 09:03
URI: https://research.sabanciuniv.edu/id/eprint/18119

Actions (login required)

View Item
View Item