Kavlak, Canan and Tekin, İbrahim (2006) 5 GHz Power Amplifier Design with AMS 0.35 m SiGe BiCMOS Technology for IEEE 802.11a WLAN. In: IEEE 14. Sinyal İşleme ve İletişim Uygulamaları Kurultayı, Antalya
Full text not available from this repository. (Request a copy)Abstract
In this work, a 5 GHz radio frequency power amplifier for 802.11a Wireless LAN applications has been designed in Austria Micro Systems (AMS) 0.35 ´m SiGe BiCMOS (ft =60 GHz) technology. At 5 GHz frequency and 3.3 V supply voltage, output power of 16.364 dBm and power added efficiency (PAE) of 36.819 % are achieved from single discrete SiGe BiCMOS HBT (npn 254H5) with 0.35 ´m emitter width. The output 1 dB compression point at 3.3 V is 11.86 dBm with a PAE of 21 %.
| Item Type: | Papers in Conference Proceedings |
|---|---|
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering |
| Divisions: | Faculty of Engineering and Natural Sciences |
| Depositing User: | İbrahim Tekin |
| Date Deposited: | 07 Dec 2006 02:00 |
| Last Modified: | 26 Apr 2022 08:33 |
| URI: | https://research.sabanciuniv.edu/id/eprint/1241 |
Actions (login required)
- View Item