Defect-induced B4C electrodes for high energy density supercapacitor devices

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Balci, Özge and Buldu, Merve and Ammar, Ameen Uddin and Kiraz , Kamil and Somer, Mehmet and Erdem, Emre (2021) Defect-induced B4C electrodes for high energy density supercapacitor devices. Scientific Reports, 11 (1). ISSN 2045-2322

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Official URL: http://dx.doi.org/10.1038/s41598-021-90878-0


Boron carbide powders were synthesized by mechanically activated annealing process using anhydrous boron oxide (B2O3) and varying carbon (C) sources such as graphite and activated carbon: The precursors were mechanically activated for different times in a high energy ball mill and reacted in an induction furnace. According to the Raman analyses of the carbon sources, the I(D)/I(G) ratio increased from similar to 0.25 to similar to 0.99, as the carbon material changed from graphite to active carbon, indicating the highly defected and disordered structure of active carbon. Complementary advanced EPR analysis of defect centers in B4C revealed that the intrinsic defects play a major role in the electrochemical performance of the supercapacitor device once they have an electrode component made of bare B4C. Depending on the starting material and synthesis conditions the conductivity, energy, and power density, as well as capacity, can be controlled hence high-performance supercapacitor devices can be produced.

Item Type:Article
Uncontrolled Keywords:Boron-carbide, paramagnetic-resonance, thermoelectric properties, nanoparticles, irradiation, EPR, temperature, systems, helium, carbon
Subjects:Q Science > QD Chemistry > QD450-801 Physical and theoretical chemistry
Q Science > QC Physics > QC176-176.9 Solids. Solid state physics
ID Code:41844
Deposited By:Emre Erdem
Deposited On:24 Aug 2021 16:29
Last Modified:24 Aug 2021 16:29

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