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Interaction-induced crossover between weak antilocalization and weak localization in a disordered InAs/GaSb double quantum well

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Sazgari Ardakani, Vahid and Sullivan, Gerard and Kaya, İsmet İnönü (2020) Interaction-induced crossover between weak antilocalization and weak localization in a disordered InAs/GaSb double quantum well. Physical Review B, 101 (15). ISSN 2469-9950 (Print) 2469-9969 (Online)

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Official URL: http://dx.doi.org/10.1103/PhysRevB.101.155302

Abstract

We present a magnetotransport study in an InAs/GaSb double quantum well structure in the weak localization regime. As the charge carriers are depleted using a top-gate electrode, we observe a crossover from weak antilocalization (WAL) to weak localization (WL), when the inelastic phase-breaking time decreases below spin-orbit characteristic time as a result of enhanced electron-electron interactions at lower carrier concentrations. The same crossover is observed with increasing temperature. The linear temperature behavior of inelastic scattering rate indicates that the dominant phase-breaking mechanism in our 2D system is due to electron-electron interaction.

Item Type:Article
Subjects:Q Science > QC Physics > QC176-176.9 Solids. Solid state physics
ID Code:39843
Deposited By:Vahid Sazgari Ardakani
Deposited On:30 Apr 2020 13:09
Last Modified:30 Apr 2020 13:09

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