240 GHz RF-MEMS switch in a 0.13 μm SiGe BiCMOS technology

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Wipf, Selin Tolunay and Göritz, Alexander and Wipf, Christian and Wietstruck, Matthias and Burak, Abdurrahman and Türkmen, Eşref and Gürbüz, Yaşar and Kaynak, Mehmet (2017) 240 GHz RF-MEMS switch in a 0.13 μm SiGe BiCMOS technology. In: IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM 2017), Miami, FL, USA

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Official URL: http://dx.doi.org/10.1109/BCTM.2017.8112910


This paper presents an RF-MEMS switch fabricated in a 0.13 μm SiGe BiCMOS process technology for 240 GHz applications. The fabricated RF-MEMS switch provides a high capacitance Con/Coff ratio of 8.78 and beyond state of the art RF performances, 0.44 dB of insertion loss and 24.6 dB of isolation at 240 GHz. The return loss is better than 9.6 dB over the J-band (220-325 GHz). To the best of the authors' knowledge, the results achieved in this study are the lowest insertion loss and the highest isolation of a Single-Pole Single-Throw (SPST) switch reported at 240 GHz.

Item Type:Papers in Conference Proceedings
ID Code:34194
Deposited By:Yaşar Gürbüz
Deposited On:23 Jan 2018 11:05
Last Modified:23 Jan 2018 11:05

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