An x-band SiGe BiCMOS T/R module core chip for phased array RADAR applications

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Dinç, Tolga and Özeren, Emre and Çalışkan, Can and Kayahan, Hüseyin and Gürbüz, Yaşar (2014) An x-band SiGe BiCMOS T/R module core chip for phased array RADAR applications. (Accepted/In Press)

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This paper presents a T/R Module core chip with 4-bit operation using 0.25µm SiGe BiCMOS technology, for X-Band Phased Array RADAR applications. T/R Module core chip consists of sub-blocks such as Low Noise Amplifier (LNA), Power Amplifier (PA), Phase Shifter (PS), Single-Pole-Double-Throw (SPDT) switch, and Variable Gain Amplifier (VGA). Switches incorporate NMOS devices while amplifiers are implemented with SiGe HBTs. Measurement results for the complete core chip and its individual sub blocks are reported here. Between 9-10GHz, the constructed T/R Module achieves about 11dB gain for both receiver (RX) and transmitter (TX) chains, while it has -10.5dBm receiver chain IIP3, and 16dBm OP1dB for transmitter chain. RMS phase error is measured as 5, while Noise Figure (NF) varies between 4-6dB. Total power dissipation of core chip is about 285mW; with a total area 4.9mm2.

Item Type:Article
ID Code:26091
Deposited By:Yaşar Gürbüz
Deposited On:13 Dec 2014 14:30
Last Modified:02 Aug 2019 15:31

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