The effect of a SIC cap on the growth of epitaxial graphene on SIC in ultra high vacuum

Warning The system is temporarily closed to updates for reporting purpose.

Çelebi, Cem and Yanık, Cenk and Günay Demirkol, Anıl and Kaya, İsmet İnönü (2012) The effect of a SIC cap on the growth of epitaxial graphene on SIC in ultra high vacuum. Carbon, 50 (8). pp. 3026-3031. ISSN 0008-6223

This is the latest version of this item.

Full text not available from this repository.

Official URL: http://dx.doi.org/10.1016/j.carbon.2012.02.088


Thin and homogeneous graphenes with excellent thickness uniformity were produced on the carbon-rich surface of a SiC crystal using an ultra high vacuum technique. The sample surface was capped by another SiC substrate with a silicon-rich face to form a shallow cavity between them. During the graphene growth by high temperature annealing, silicon atoms sublimated from the capped sample were trapped inside the cavity between the two substrates. The confined vapor phase silicon maintains a relatively high partial pressure at the sample surface which significantly reduces the extremely high growth rate of epitaxial graphene to an easily controllable range. The structure and morphology of the graphene samples grown with this capping method are characterized by low energy electron diffraction and Raman spectroscopy and the results are compared with those of layers grown on an uncapped sample surface. The results show that capping yields much thinner graphene with excellent uniformity.

Item Type:Article
Uncontrolled Keywords:graphene, silicon carbide, epitaxial growth
Subjects:Q Science > QC Physics > QC176-176.9 Solids. Solid state physics
ID Code:19085
Deposited By:İsmet İnönü Kaya
Deposited On:01 Jun 2012 11:13
Last Modified:11 Aug 2018 12:10

Available Versions of this Item

Repository Staff Only: item control page