Can, Musa Mutlu and Shah, S. Ismat and Doty, Matthew F. and Haughn, Chelsea R. and Fırat, Tezer (2012) Electrical and optical properties of point defects in ZnO thin films. Journal of Physics D: Applied Physics, 45 (19). ISSN 0022-3727
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Official URL: http://dx.doi.org/10.1088/0022-3727/45/19/195104
Abstract
We show that the deposition of ZnO films under varying oxygen partial pressure and annealing conditions allows for the controllable formation of specific defects. Using x-ray diffraction and photoluminescence, we characterize the defects formed and show that these defects are responsible for changes in film carrier density, carrier type, sheet resistivity and mobility.
| Item Type: | Article |
|---|---|
| Additional Information: | Article Number: 195104 |
| Subjects: | Q Science > QC Physics > QC1 General |
| Divisions: | Sabancı University Nanotechnology Research and Application Center Faculty of Engineering and Natural Sciences |
| Depositing User: | Musa Mutlu Can |
| Date Deposited: | 28 May 2012 15:17 |
| Last Modified: | 31 Jul 2019 11:00 |
| URI: | https://research.sabanciuniv.edu/id/eprint/19070 |
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