A Low noise and low power, SiGe-BiCMOS LNA for IEEE 802.11a Applications

Official URL: http://ieeexplore.ieee.org/iel5/4057528/4057529/04057591.pdf?tp=&arnumber=4057591&isnumber=4057529

This paper presents a design methodology and measurement results of a low noise and low power fully-integrated LNA, compatible with all the three bands of IEEE 802.11a WLAN applications in the 5-6 GHz. Microwave Monolithic Integrated Circuit (MMIC) has been fabricated using a commercial 0.35-´m Silicon Germanium (SiGe) BiCMOS technology. We emphasized, in this paper, on the importance of simultaneous noiseinput matching and extracting parasitic components through the use of electromagnetic modeling and simulation. Finally, the measurement results shows that SiGe-HBT, on-chip matched LNA exhibits a Noise Figure (NF) of 2.9 dB, gain > 14dB, input return loss < -10dB, output return loss < -10dB. The circuit consumes only 10.6 mW, under 3.3V supply voltage and has a die area of 595 × 925 ´m2, including pads.