Design of a 4.2-5.4 GHz Differential LC VCO Using 0.35m SiGe BiCMOS Technology for IEEE 802.11a Applications

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Esame, İbrahim Onur and Tekin, İbrahim and Gürbüz, Yaşar and Bozkurt, Ayhan (2006) Design of a 4.2-5.4 GHz Differential LC VCO Using 0.35m SiGe BiCMOS Technology for IEEE 802.11a Applications. (Accepted/In Press)

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Official URL: http://www3.interscience.wiley.com/cgi-bin/fulltext/114133670/PDFSTART


In this paper, a 4.2-5.4 GHz, Gm LC voltage controlled oscillator (VCO) for IEEE 802.11a standard is presented. The circuit is designed with AMS 0.35m SiGe BiCMOS process that includes high-speed SiGe Heterojunction Bipolar Transistors (HBTs). According to post-layout simulation results, phase noise is -110.7 dBc/Hz at 1MHz offset from 5.4 GHz carrier frequency and -113.4 dBc/Hz from 4.2 GHz carrier frequency. A linear, 1200 MHz tuning range is obtained from the simulations, utilizing accumulation-mode varactors. Phase noise was also found to be relatively low due to taking the advantage of differential tuning concept. Output power of the fundamental frequency changes between 4.8 dBm and 5.5 dBm depending on the tuning voltage. Based on the simulation results, the circuit draws 2 mA without buffers and 14.5 mA from 2.5 V supply including buffer circuits leading to a total power dissipation of 36.25 mW. The circuit layout occupies an area of 0.6 mm2 on Si substrate, including DC and RF pads.

Item Type:Article
Uncontrolled Keywords:VCO; SiGe; BiCMOS; WLAN; differential tuning; accumulation MOS varactors; RFIC.
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
ID Code:101
Deposited By:İbrahim Onur Esame
Deposited On:16 Feb 2007 02:00
Last Modified:07 Jan 2008 10:47

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