Impedance Matching Wilkinson Power Dividers in 0.35μm SiGe BiCMOS Technology

Kaymaksüt, Ercan and Gürbüz, Yaşar and Tekin, İbrahim (2008) Impedance Matching Wilkinson Power Dividers in 0.35μm SiGe BiCMOS Technology. (Accepted/In Press)

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Abstract

This paper presents two miniature Impedance Matching Wilkinson Power Divider circuits in 0.35μm SiGe BiCMOS technology for on-chip power combining techniques for WLAN applications. The Impedance Matching Wilkinson Power Divider circuits are used as splitter/combiner for a 5.2 GHz fully integrated class-A mode combined power amplifier. The splitter and combiner are designed to match the input and output impedances of the amplifier, respectively, so that no additional impedance matching is needed. Two fabricated impedance matching Wilkinson power divider circuits (splitter and combiner) have insertion losses better than 1.4dB, return losses less than -13dB and port-to-port isolation > 12 dB at 5.2GHz.

Item Type:	Article
Subjects:	T Technology > TK Electrical engineering. Electronics Nuclear engineering
ID Code:	9804
Deposited By:	İbrahim Tekin
Deposited On:	07 Nov 2008 17:09
Last Modified:	01 Oct 2009 13:50

Available Versions of this Item

Impedance Matching Wilkinson Power Dividers in 0.35μm SiGe BiCMOS Technology. (deposited 27 Oct 2008 12:08)
- Impedance Matching Wilkinson Power Dividers in 0.35μm SiGe BiCMOS Technology. (deposited 07 Nov 2008 17:09) [Currently Displayed]
  - Impedance matching wilkinson power dividers in 0.35μm SiGe BiCMOS technology. (deposited 01 Oct 2009 13:50)

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