Impedance Matching Wilkinson Power Dividers in 0.35μm SiGe BiCMOS Technology
Kaymaksüt, Ercan and Gürbüz, Yaşar and Tekin, İbrahim (2008) Impedance Matching Wilkinson Power Dividers in 0.35μm SiGe BiCMOS Technology. (Accepted/In Press)
This paper presents two miniature Impedance Matching Wilkinson Power Divider circuits in 0.35μm SiGe BiCMOS technology for on-chip power combining techniques for WLAN applications. The Impedance Matching Wilkinson Power Divider circuits are used as splitter/combiner for a 5.2 GHz fully integrated class-A mode combined power amplifier. The splitter and combiner are designed to match the input and output impedances of the amplifier, respectively, so that no additional impedance matching is needed. Two fabricated impedance matching Wilkinson power divider circuits (splitter and combiner) have insertion losses better than 1.4dB, return losses less than -13dB and port-to-port isolation > 12 dB at 5.2GHz.
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