Ultra-low noise amplifier for x-band SiGe BiCMOS phased array applications

Çalışkan, Can and Kalyoncu, İlker and Yazıcı, Melik and Kaynak, Mehmet and Gürbüz, Yaşar (2019) Ultra-low noise amplifier for x-band SiGe BiCMOS phased array applications. IEEE Transactions on Circuits and Systems II: Express Briefs . ISSN 1549-7747 (Print) 1558-3791 (Online) Published Online First http://dx.doi.org/10.1109/TCSII.2019.2891133

[img]PDF - Registered users only - Requires a PDF viewer such as GSview, Xpdf or Adobe Acrobat Reader

Official URL: http://dx.doi.org/10.1109/TCSII.2019.2891133


This paper presents a low noise amplifier (LNA) with sub-1dB noise figure (NF) at X-Band. Different than generally known noise-and-power match technique, the presented LNA is designed by considering impedance between the base-collector terminals of an HBT in CE configuration. The presented amplifier stage can achieve sub-1dB NF performance with 10 dB gain. The LNA dissipates 19.8 mW of dc power and has 0.77 dB NF while occupying 0.4 mm2. It succeeds 1.5 dBm of input-referred compression point. To the best of authors’ knowledge, the presented work achieves the best NF performance in the literature of any LNA that utilizes SiGe technology.

Item Type:Article
ID Code:38405
Deposited By:Yaşar Gürbüz
Deposited On:01 Aug 2019 22:19
Last Modified:01 Aug 2019 22:19

Repository Staff Only: item control page