title   
  

A sub-atmospheric chemical vapor deposition process for deposition of oxide liner in high aspect ratio through silicon vias

Lisker, Marco and Marschmeyer, Steffen and Kaynak, Mehmet and Tekin, İbrahim (2011) A sub-atmospheric chemical vapor deposition process for deposition of oxide liner in high aspect ratio through silicon vias. Journal of Nanoscience and Nanotechnology , 11 (9). pp. 8061-8067. ISSN 1533-4880

[img]MS Word
3377Kb

Official URL: http://dx.doi.org/10.1166/jnn.2011.5047

Abstract

The formation of a Through Silicon Via (TSV) includes a deep Si trench etching and the formation of an insulating layer along the high-aspect-ratio trench and the filling of a conductive material into the via hole. The isolation of the filling conductor from the silicon substrate becomes more important for higher frequencies due to the high coupling of the signal to the silicon. The importance of the oxide thickness on the via wall isolation can be verified using electromagnetic field simulators. To satisfy the needs on the Silicon dioxide deposition, a sub-atmospheric chemical vapor deposition (SA-CVD) process has been developed to deposit an isolation oxide to the walls of deep silicon trenches. The technique provides excellent step coverage of the 100 mu m depth silicon trenches with the high aspect ratio of 20 and more. The developed technique allows covering the deep silicon trenches by oxide and makes the high isolation of TSVs from silicon substrate feasible which is the key factor for the performance of TSVs for mm-wave 3D packaging.

Item Type:Article
Additional Information:Conference: EuroCVD-18 Conference (EuroCVD) / Location: Kinsale, IRELAND / Date: SEP 04-09, 2011
Uncontrolled Keywords:Through Silicon via; Sub-Atmospheric CVD; via Middle; via Last; TEOS; Ozone; SiO(2)
Subjects:T Technology > TA Engineering (General). Civil engineering (General) > TA401-492 Materials of engineering and construction. Mechanics of materials
Q Science > QC Physics > QC1 General
Q Science > QD Chemistry > QD001-65 General
T Technology > T Technology (General) > T174.7 Nanotechnology
ID Code:17511
Deposited By:İbrahim Tekin
Deposited On:24 Nov 2011 10:44
Last Modified:04 Sep 2013 13:30

Repository Staff Only: item control page