The role of Si impurities in the transient dopant segregation and precipitation in yttrium-doped alumina
Sturm, Saso and Gülgün, Mehmet Ali and Richter, Gunther and Morales, Francisco M. and Cannon, Rowland M. and Ruehle, Manfred (2010) The role of Si impurities in the transient dopant segregation and precipitation in yttrium-doped alumina. In: 7th International Workshop on Interfaces - New materials Via Interfacial Control, Santiago de Compostela, Spain
Official URL: http://dx.doi.org/10.3139/146.110258
Y-doped alumina was sintered at 1500 degrees C for 10 h under ultra-clean experimental conditions without experiencing any abnormal grain growth. The yttrium was fairly homogeneously distributed at the grain boundaries, with a mean value of (Gamma) over bar (Y) = 5.5 at nm(-2). The Y-Al-O precipitates in the clean, Y2O3-doped alumina specimen were the YAP (YAlO3) phase, whereas only the YAG (Y3Al5O12) phase was present in the Y2O3-doped alumina samples contaminated with SiO2. The excess concentrations of Y and Si atoms at the grain boundaries that, at the same time, provoke the formation of structurally complex YAG precipitates and abnormal grain growth were both estimated to be at 4-5 at nm(-2). The compositions of the triple point pocket phases found in the region of the exaggeratedly grown alumina grains indicate the presence of alumino-silicate bulk liquids at the sintering temperature.
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