Impedance matching wilkinson power dividers in 0.35μm SiGe BiCMOS technology

Kaymaksüt, Ercan and Gürbüz, Yaşar and Tekin, İbrahim (2009) Impedance matching wilkinson power dividers in 0.35μm SiGe BiCMOS technology. Microwave and Optical Technology Letters, 51 (3). pp. 681-685. ISSN 0895-2477

This is the latest version of this item.

Preview

PDF - Requires a PDF viewer such as GSview, Xpdf or Adobe Acrobat Reader
340Kb

Official URL: http://dx.doi.org/10.1002/mop.24159

Abstract

This paper presents two miniature Impedance Matching Wilkinson Power Divider circuits in 0.35μm SiGe BiCMOS technology for on-chip power combining techniques for WLAN applications. The Impedance Matching Wilkinson Power Divider circuits are used as splitter/combiner for a 5.2 GHz fully integrated class-A mode combined power amplifier. The splitter and combiner are designed to match the input and output impedances of the amplifier, respectively, so that no additional impedance matching is needed. Two fabricated impedance matching Wilkinson power divider circuits (splitter and combiner) have insertion losses better than 1.4dB, return losses less than -13dB and port-to-port isolation > 12 dB at 5.2GHz.

Item Type:	Article
Additional Information:	WoS Title: Impedance matching wilkinson power dividers in 0.35 mu m SiGe BiCMOS technology
Uncontrolled Keywords:	on-chip power divider; impedance matching; power amplifier
Subjects:	T Technology > TK Electrical engineering. Electronics Nuclear engineering
ID Code:	12076
Deposited By:	İbrahim Tekin
Deposited On:	01 Oct 2009 13:50
Last Modified:	25 May 2011 14:13

Available Versions of this Item

Impedance Matching Wilkinson Power Dividers in 0.35μm SiGe BiCMOS Technology. (deposited 27 Oct 2008 12:08)
- Impedance Matching Wilkinson Power Dividers in 0.35μm SiGe BiCMOS Technology. (deposited 07 Nov 2008 17:09)
  - Impedance matching wilkinson power dividers in 0.35μm SiGe BiCMOS technology. (deposited 01 Oct 2009 13:50) [Currently Displayed]

Repository Staff Only: item control page