Highly linear low-noise amplifier with novel two-mode feedback control method

Official URL: https://dx.doi.org/10.1109/LMWT.2023.3349114

This article introduces a novel two-mode feedback-controlled postdistortion technique designed to enhance the third-order intercept point (IIP3) performance of the low-noise amplifier (LNA), with negligible impact on the noise figure (NF) and gain performance. The proposed method leverages the benefits of cascode and diode-connected postdistortion techniques. The LNA was developed using 130-nm CMOS silicon-on-insulator (SOI) technology. Measurements indicate an increase in the IIP3 value from <inline-formula> <tex-math notation="LaTeX">$-$</tex-math> </inline-formula>1.5 to <inline-formula> <tex-math notation="LaTeX">$+$</tex-math> </inline-formula>5 dBm at 25 GHz. The proposed design also provides the ability to control the highest IIP3 with switches across different frequency bands within the 18&#x2013;28-GHz range. The measured minimum NF varies from 2.6 to 3.07 dB, and the peak gain of the LNA experienced a slight reduction from 13.7 to 13.2 dB when the linearization circuit toggled between the on and off modes.