High responsivity power detectors for W/D-bands passive imaging systems in 0.13 mu m SiGe BiCMOS technology

Official URL: http://dx.doi.org/10.23919/APMC.2018.8617213

This paper presents the design, implementation and measurement results of power detectors (PDs) operating at W-band and D-band. Two detectors are designed and fabricated in 0.13μm SiGe BiCMOS technology. The measured minimum NEPs are 0.43 and 4.2 pW/Hz 1/2 , and the peak responsivities are 772 and 132 kV/W for the W-band and D-band power detectors, respectively. Both the PDs have wideband input matching to improve the performance over the entire bandwidth and occupy less than 0.37 mm 2 of area. The fabricated chips demonstrate the state-of-the-art responsivity performance to be utilized in W/Dbands radiometer systems.