title   
  

Fabrication of transparent conducting amorphous Zn–Sn–In–O thin 3 films by direct current magnetron sputtering

Ow-Yang, Cleva W. and Yeom, Hyo-young and Paine, David C. (2007) Fabrication of transparent conducting amorphous Zn–Sn–In–O thin 3 films by direct current magnetron sputtering. (Accepted/In Press)

WarningThere is a more recent version of this item available.

Full text not available from this repository.

Abstract

Amorphous ZnO–SnO2–In2O3 films were grown by direct current magnetron sputtering from vacuum hot pressed ceramic oxide targets of Zn:In:Sn cation ratios 1:2:1 and 1:2:1.5 onto glass substrates. X-ray diffraction analysis showed that the microstructure remained amorphous during annealing at 200 °C for up to 5 hours. By monitoring the electrical resistivity, oxygen content and substrate temperature were optimized during deposition. The optimal films were characterized by Hall Effect, work function and optical spectroscopy measurements. Films of 1:2:1 composition showed the lowest resistivity (7.6×10−4 Ω-cm), when deposited onto substrates preheated to 300 °C. Transmissivity of all films exceeded 80% in the visible spectral region. The energy gap was 3.52–3.74 eV, and the work function ranged 5.08–5.22 eV, suitable for cathode applications in organic light emitting diodes. Overall, the film characteristics were comparable or superior to those of amorphous tin-doped indium oxide and zinc-doped indium oxide films and may serve as viable, lower-cost alternatives.

Item Type:Article
Subjects:Q Science > QC Physics
ID Code:5142
Deposited By:Cleva W. Ow-Yang
Deposited On:31 Oct 2007 08:28
Last Modified:06 Mar 2008 01:24

Available Versions of this Item

Repository Staff Only: item control page