PECVD diamond-based high performance power diodes
Gürbüz, Yaşar and Kang, Weng Poo and Davidson, Jimmy L. and Kerns, David V. and Zhou, Q. (2005) PECVD diamond-based high performance power diodes. IEEE transactions on power electronics, 20 (1). pp. 1-10. ISSN 0885-8993
Official URL: http://dx.doi.org/10.1109/TPEL.2004.839883
In this study, we have designed, fabricated, characterized, and analyzed plasma-enhanced chemical vapor deposition (PECVD) diamond-based Schottky diodes for high power electronics applications. We have elaborated four critical issues in the synthetic-diamond semiconductor technology: 1) growth, 2) doping, 3) Schottky contact, and 4) different device structures in order to achieve better performance parameters. We have obtained 500 V of breakdown voltage on one device and 100 A/cm/sup 2/ of current density on another device, optimized for different applications. These values are among the highest reported with the polycrystalline diamond-based devices. We have utilized different fabrication techniques for the growth of PECVD-diamond, different metals as a Schottky contact on diamond film and also optimized structural parameters such as diamond film thickness and doping concentration in order to achieve a high-performance power diodes. Analysis of the current conduction mechanisms of these devices in this study revealed a space-charge-limited current conduction mechanism in the forward bias region while thermionic field emission controlled current conduction mechanism in the reverse bias region. Performance parameters such as forward voltage drop, barrier height, and current density were analyzed as a function of temperature and type of metal Schottky contacts.
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