A d-band SPDT switch utilizing reverse-saturated SiGe HBTs for dicke-radiometers

Çetindoğan, Barbaros and Üstündağ, Berktuğ and Türkmen, Eşref and Wietstruck, Matthias and Kaynak, Mehmet and Gürbüz, Yaşar (2018) A d-band SPDT switch utilizing reverse-saturated SiGe HBTs for dicke-radiometers. In: 11th German Microwave Conference (GeMiC 2018), Freiburg, Germany

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Official URL: http://dx.doi.org/10.23919/GEMIC.2018.8335025


This paper presents a low insertion loss and high isolation D-band (110-170 GHz) single-pole double-throw (SPDT) switch utilizing reverse-saturated SiGe HBTs for Dicke-radiometers. The SPDT switch design is based on the quarter wave shunt switch topology and implemented with further optimizations to improve the overall insertion loss and decrease the total chip size in a commercial 0.13-mu m SiGe BiCMOS technology. Measurement results of the implemented SPDT switch show a minimum insertion loss of 2.6 dB at 125 GHz and a maximum isolation of 30 dB at 151 GHz while the measured input and output return loss is greater than 10 dB across 110-170 GHz. Total power consumption of the SPDT switch is 5.3 mW while draining 5.6 mA from a 0.95 V DC supply. Overall chip size is only 0.5 x 0.32 = 0.16 mm(2), excluding the RF and DC pads.

Item Type:Papers in Conference Proceedings
Uncontrolled Keywords:millimeter-wave integrated circuits; single-pole double-throw (SPDT) switch; SiGe BiCMOS; Radiometers
ID Code:36429
Deposited By:Yaşar Gürbüz
Deposited On:08 Sep 2018 19:11
Last Modified:08 Sep 2018 19:11

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