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A x-band SiGe BiCMOS triple-cascode LNA with boosted gain and P-1dB

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Davulcu, Murat and Çalışkan, Can and Kalyoncu, İlker and Gürbüz, Yaşar (2018) A x-band SiGe BiCMOS triple-cascode LNA with boosted gain and P-1dB. IEEE Transactions on Circuits and Systems II: Express Briefs, 65 (8). pp. 994-998. ISSN 1549-7747 (Print) 1558-3791 (Online)

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Official URL: http://dx.doi.org/10.1109/TCSII.2018.2800284

Abstract

In this brief, the design, implementation, and experimental results of an X-band low noise amplifier (LNA) implemented in 0.13 mu m SiGe BiCMOS process technology is reported. The presented LNA based on an inductively degenerated triple-cascode topology employing SiGe hetero-junction bipolar transistors (HBT) featuring f(T)/f (max) of 250/330 GHz. To authors' best knowledge, this brief is the first LNA incorporating triple-cascode topology and HBTs. Design techniques explored to enhance the gain, noise figure (NF), and linearity performance, along with the investigation of advantages provided by utilizing triple-cascode configuration are addressed. The measurement of the proposed LNA results in a minimum NF of 1.35 dB at 8 GHz, which remains less than 1.7 dB across 6-12 GHz frequency band. In addition, the LNA delivers a peak gain of 20.5 dB at 9 GHz, where it exhibits a state-of-the-art output 1-dB compression point (OP1dB) of 18.75 dBm and third-order intercept point OIP3 of 24.75 dBm, while drawing 21 mA dc current from a 4.8-V supply. According to the utilized figure-of-merit, the measured results are better compared to previously reported work in the open literature.

Item Type:Article
Uncontrolled Keywords:BiCMOS integrated circuits; transceivers; heterojunction bipolar transistors
Subjects:UNSPECIFIED
ID Code:36425
Deposited By:Yaşar Gürbüz
Deposited On:08 Sep 2018 16:17
Last Modified:08 Sep 2018 16:17

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