Strongly temperature dependent resistance of meander-patterned graphene
Vasileva, G. Yu and Smirnov, D. and Vasilyev, Yu B. and Nestoklon, M. O. and Averkiev, N. S. and Novikov, S. and Kaya, İsmet İnönü and Haug, R. J. (2017) Strongly temperature dependent resistance of meander-patterned graphene. Applied Physics Letters, 110 (11). ISSN 0003-6951 (Print) 1077-3118 (Online)
Official URL: http://dx.doi.org/10.1063/1.4978597
We have studied the electronic properties of epitaxial graphene devices patterned in a meander shape with the length up to a few centimeters and the width of few tens of microns. These samples show a pronounced dependence of the resistance on temperature. Accurate comparison with the theory shows that this temperature dependence originates from the weak localization effect observed over a broad temperature range from 1.5 K up to 77 K. The comparison allows us to estimate the characteristic times related to quantum interference. In addition, a large resistance enhancement with temperature is observed at the quantum Hall regime near the filling factor of 2. Record high resistance and its strong temperature dependence are favorable for the construction of bolometric photodetectors.
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