Strong composition dependence of resistive switching in Ba1-xSrxTiO3 thin films on semiconducting substrates and its thermodynamic analysis
Mohammad Moradi, Omid and Şen, Canhan and Boni, A. G. and Pintilie, L. and Mısırlıoğlu, Burç (2018) Strong composition dependence of resistive switching in Ba1-xSrxTiO3 thin films on semiconducting substrates and its thermodynamic analysis. Acta Materialia, 148 . pp. 419-431. ISSN 1359-6454 (Print) 1873-2453 (Online)
Official URL: http://dx.doi.org/10.1016/j.actamat.2018.02.015
In this work, we report on the variability of the Schottky effect in solution processed Ba1-xSrxTiO3 films (BST, x = 0, 0.5) grown on 0.5% Nb doped SrTiO3 substrates with top Pt electrodes (NSTO/BST/Pt). The films display leakage currents accompanied by varying degrees of hystereses in the current-voltage measurements. The magnitude of the leakage and hystereses depend on the Sr content. We focus on the current-voltage (I-V) behavior of our samples in the light of thermodynamic theory of ferroelectrics coupled with equations of semiconductors. Our calculations allowed us to unambigously determine the electronic character of the defects and related band bending effects in our samples. The extent of asymmetry and the hystereses in the I-V curves for x = 0 and 0.5 are shown to be controlled by the polarization in qualitative agreement with our calculations. Amplitude of the ferroelectric polarization, which is a function of composition here, has a strong impact on leakage currents in forward bias while this effect is much weaker under negative bias. The latter occurs as polarization pointing away from the NSTO semiconducting substrate causes depletion of carriers at the NSTO side of the NSTO/BST interface, increasing resistance to current flow through the stack. Such an occurence also increases the energy gap between the Fermi level and the conduction bands of the films, thereby reducing the bulk conduction through the film as well. The dependence of leakage currents on polarization direction points out to the possibility of a non-destructive read-out route in ferroelectric films much thicker than tunnel junctions.
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