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High dynamic range low noise amplifier and wideband hybrid phase shifter for SiGe BiCMOS phased array T/R modules

Çalışkan, Can (2014) High dynamic range low noise amplifier and wideband hybrid phase shifter for SiGe BiCMOS phased array T/R modules. [Thesis]

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Official URL: http://risc01.sabanciuniv.edu/record=b1589803 (Table of Contents)

Abstract

Transmit/Receive Module (T/R Module) is one of the most essential blocks for Phased Array Radio Detection and Ranging (RADAR) system; due to being very influential on system level performance. To achieve high performance specifications, T/R Module structures are constructed with using III-V devices, which has some significant disadvantages; they are costly, and also consume too much area and power. As a result, application area of T/R Module is mainly restricted with the military and dedicated applications. In recent years, SiGe BiCMOS technology has started to be an emerging competitor to III-V devices, with the help of bandgap engineering. SiGe BiCMOS based T/R Module structures are facilitating similar or better performance parameters with a much lower cost, which gives a chance to T/R Module not only used for military purposes, but also for commercial applications. For this reason, this thesis has focused on SiGe BiCMOS based X-Band T/R Module, specifically on its two significant blocks; Low Noise Amplifier (LNA), and Phase Shifter. Low Noise Amplifier is the first block of the receiver chain of the T/R Module; as a result its performance is very influential on the metrics of receiver, such as Noise Figure (NF), and gain. In this thesis, designing procedures for three different high dynamic range LNA structures are described, using 0.13μm SiGe IHP-Microelectronics and 0.13μm SiGe IBM technology. To achieve a high dynamic range, three different methodologies implemented and compared; single-stage cascode LNA, telescopic LNA, and two-stage cascode LNA. Among these, two-stage cascode LNA achieved better performance metrics of -3.72dBm level for input-compression point, total gain exceeding 20.5dB, a NF performance of about 2dB, and a power consumption of 115.8mW. Phase Shifter is used both in receiver and transmitting chain, as a result it is also crucial for the performance of the T/R Module. The design, implemented in 0.13μm SiGe IBM technology, had aimed to combine advantages of different topologies, such as passive phase shifter and vector modulator, to achieve a high phase resolution in wide bandwidth, and high linearity. The designed hybrid Phase Shifter achieves 6-Bit operation with 6.75GHz of bandwidth and 15dBm of input-P1dB. Moreover, design can be switched to 7-Bit phase shifter with 4.5GHz, without requiring any additional circuitry.

Item Type:Thesis
Uncontrolled Keywords:T/R Module. -- SiGe BiCMOS. -- Low noise amplifier. -- Phase shifter. -- Linearity. -- Hybrid. -- Wideband Alıcı/verici modülü. -- SiGe BiCMOS. -- Düşük gürültülü kuvvetlendirici. -- Faz kaydırıcı. -- Doğrusal. -- Karma. -- Geniş bantlı.
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering > TK7800-8360 Electronics
ID Code:29256
Deposited By:IC-Cataloging
Deposited On:05 Apr 2016 11:29
Last Modified:13 Feb 2017 10:19

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