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An X-Band power amplifier design for on-chip RADAR applications

Zihir, Samet (2011) An X-Band power amplifier design for on-chip RADAR applications. [Thesis]

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Official URL: http://192.168.1.20/record=b1378242 (Table of Contents)

Abstract

Tremendous growth of RAdio Detecting And Ranging (RADAR) and communication electronics require low manufacturing cost, excellent performance, minimum area and highly integrated solutions for transmitter/receiver (T/R) modules, which are one of the most important blocks of RADAR systems. New circuit topologies and process technologies are investigated to fulfill these requirements of next generation RADAR systems. With the recent improvements, Silicon-Germanium Bipolar CMOS technology became a good candidate for recently used III-V technologies, such as GaAs, InP, and GaN, to meet high speed and performance requirements of present RADAR applications. As new process technologies are used, new solutions and circuit architectures have to be provided while taking into account the advantages and disadvantageous of used technologies. In this thesis, a new T/R module system architecture is presented for single/onchip X-Band phased array RADAR applications. On-chip T/R module consists of five blocks; T/R switch, single-pole double-throw (SPDT) switch, low noise amplifier (LNA), power amplifier (PA), and phase shifter. As the main focus of this thesis, a two-stage power amplifier is realized, discussed and measured. Designed in IHP's 0.25 [micrometer] SiGe BiCMOS process technology, the power amplifier operates in Class-A mode to achieve high linearity and presents a measured small-signal gain of 25 dB at 10 GHz. While achieving an output power of 22 dBm, the power amplifier has drain efficiency of 30 % in saturation. The total die area is 1 [square millimeters], including RF and DC pads. To our knowledge, these results are comparable to and/or better than those reported in the literature.

Item Type:Thesis
Uncontrolled Keywords:Phased array Radar. -- T/R module. -- Power amplifier, SiGe BiCMOS. -- X-Band integrated circuits. -- Integrated circuits. -- High frequency. -- Radar systems. -- Transmit/Receive module. -- Faz dizinli Radar. -- T/R modülü. -- Güç kuvvetlendiricisi. -- X-Bandında entegre devre. -- Tümleşik devreler. -- Yüksek frekans. -- Güç yükseltici. -- Radar sistemleri. -- Alıcı-verici modülü.
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering > TK7800-8360 Electronics
ID Code:24520
Deposited By:IC-Cataloging
Deposited On:17 Sep 2014 11:28
Last Modified:17 Sep 2014 11:28

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