Local breakdown of the quantum Hall effect in narrow single layer graphene Hall devices

Yanık, Cenk and Kaya, İsmet İnönü (2013) Local breakdown of the quantum Hall effect in narrow single layer graphene Hall devices. Solid State Communications, 160 . pp. 47-51. ISSN 0038-1098

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Official URL: http://dx.doi.org/10.1016/j.ssc.2013.02.011


We have analyzed the breakdown of the quantum Hall effect in 1 mu m wide Hall devices fabricated from an exfoliated monolayer graphene transferred on SiOx. We have observed that the deviation of the Hall resistance from its quantized value is weakly dependent on the longitudinal resistivity up to a current density of 5 A/m, where the Hall resistance remains quantized even when the longitudinal resistance increases monotonously with the current. Then a collapse in the quantized resistance occurs while longitudinal resistance keeps its gradual increase. The exponential increase of the conductivity with respect to the current suggests impurity mediated inter-Landau level scattering as the mechanism of the breakdown. The results are interpreted as the strong variation of the breakdown behavior throughout the sample due to the randomly distributed scattering centers that mediates the breakdown.

Item Type:Article
Uncontrolled Keywords:Graphene; Breakdown; Quantum Hall effect
Subjects:Q Science > QC Physics > QC176-176.9 Solids. Solid state physics
ID Code:23646
Deposited By:İsmet İnönü Kaya
Deposited On:08 Jan 2014 15:45
Last Modified:11 Aug 2018 12:16

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