The effects of post-deposition annealing conditions on structure and created defects in Zn0.90Co0.10O thin films deposited on Si(100) substrate
Can, Musa Mutlu and Fırat, Tezer and Shah, S. Ismat and Bakan, Feray and Oral, Ahmet (2012) The effects of post-deposition annealing conditions on structure and created defects in Zn0.90Co0.10O thin films deposited on Si(100) substrate. (Accepted/In Press)
We analyze the effect of post-deposition annealing conditions on both the structure and the created defects in Zn0.90Co0.10O thin films deposited on the Si (100) substrates by RF magnetron sputtering technique using home-made targets. We concentrated on understanding the homogeneity of substituted Co+2 ions and the annealing effects on the amount of defects in the ZnO lattice. Orientations of thin films are found to be in the  direction with a surface roughness changing from 67±2 nm to 25.8±0.6 nm by annealing. The Co+2 ion substitutions, changing from 7.5±0.3 % to 8.8±0.3 %, cause to form Zn–O–Co bonds instead of Zn–O–Zn and split the Co2p energy level to Co2p1/2 and Co2p3/2 with 15.67±0.06 eV energy difference. In addition, the defects in the lattice were revealed from the correlations between Zn–O–Co bonds and intensity of Raman peak at around 691 cm-1. Furthermore, the asymmetry changes of O1s peak positions in X-ray Photoelectron Spectra (XPS) were also found to be in accordance with the Raman results.
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