title   
  

X-band, high performance, SiGe-heterojunction bipolar transistors-low noise amplifier for phased array radar applications

Dinç, Tolga and Zihir, Samet and Kalyoncu, İlker and Gürbüz, Yaşar (2012) X-band, high performance, SiGe-heterojunction bipolar transistors-low noise amplifier for phased array radar applications. IET Microwaves, Antennas & Propagation, 6 (7). pp. 768-772. ISSN 1751-8725 (Print) 1751-8733 (Online)

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Official URL: http://dx.doi.org/10.1049/iet-map.2011.0384

Abstract

This study presents an X-band low noise amplifier (LNA) implemented in 0.25 mu m SiGe BiCMOS process aiming for phased array radar applications. The LNA is composed of two cascode stages using SiGe heterojunction bipolar transistors to achieve low noise figure, high gain and a better matching to 50 Omega at the input and output, simultaneously. The first stage is designed for low noise performance whereas the second stage is optimised to improve the input third-order intercept point (IIP3). The LNA resulted in a measured gain of 21 dB, a noise figure of 1.52 dB and an IIP3 of -8 dBm at 10 GHz. The active chip area without pads is 620 x 820 mu m(2) and the power dissipation is 22 mW from a 2.2 V power supply. These performance parameters collectively constitute the best figure-of-merit value of 101, reported in similar technologies.

Item Type:Article
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering > TK5101-6720 Telecommunication
T Technology > TK Electrical engineering. Electronics Nuclear engineering > TK1-4661 Electrical engineering. Electronics Nuclear engineering
ID Code:19892
Deposited By:Yaşar Gürbüz
Deposited On:27 Oct 2012 22:12
Last Modified:27 Oct 2012 22:12

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