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Compact X-band SiGe power amplifier for single-chip phased array radar applications

Zihir, Samet and Dinç, Tolga and Gürbüz, Yaşar (2012) Compact X-band SiGe power amplifier for single-chip phased array radar applications. IET Microwaves, Antennas & Propagation, 6 (8). pp. 956-961. ISSN 1751-8725 (Print) 1751-8733 (Online)

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Official URL: http://dx.doi.org/10.1049/iet-map.2012.0014

Abstract

An X-band power amplifier (PA) is presented for single-chip phased array radar applications. In this work, the choice of optimum circuit topology for X-band PA design is discussed and possible stability issues for high and low frequencies are analysed. The PA features a two-stage cascode architecture that includes both high-speed (low breakdown) and high breakdown (low-speed) SiGe transistors. It consists of two stages providing a 23.2 dBm saturated output power with a 28% power-added efficiency at 9 GHz. The output 1-dB compression point (P-1dB) is higher than 20 dBm in a 3 GHz bandwidth and has a maximum value of 22.2 dBm. The small-signal gain is 25.5 dB with a 3-dB bandwidth of 3.2 GHz (7.3-10.5 GHz). The PA has been fabricated using 0.25 mu m SiGe BiCMOS process provided by IHP Microelectronics. The PA occupies 1 mm x 0.6 mm chip area and consumes 120 mA from a 4 V supply voltage. These results demonstrate comparable or better performance than other reported PAs and suitable performance for single-chip phased array applications.

Item Type:Article
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering > TK5101-6720 Telecommunication
T Technology > TK Electrical engineering. Electronics Nuclear engineering > TK1-4661 Electrical engineering. Electronics Nuclear engineering
ID Code:19889
Deposited By:Yaşar Gürbüz
Deposited On:27 Oct 2012 21:28
Last Modified:27 Oct 2012 21:28

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