title   
  

Polarization retention and switching in ferroelectric nanocapacitors with defects on tensile substrates

Mısırlıoğlu, Burç and Yıldız, Mehmet (2012) Polarization retention and switching in ferroelectric nanocapacitors with defects on tensile substrates. Solid State Electronics, 67 (1). pp. 38-44. ISSN 0038-1101

[img]PDF (Article) - Registered users only - Requires a PDF viewer such as GSview, Xpdf or Adobe Acrobat Reader
807Kb

Official URL: http://dx.doi.org/10.1016/j.sse.2011.08.003

Abstract

We analyze the effect of defects on the polarization stability and switching of epitaxial nanocapacitor ferroelectric films on tensile substrates using a thermodynamic approach. Defects are either frozen-in dipoles of the p-type or trapped space charges. The retention of the in-plane ferroelectric polarization does not suffer nearly at all from the possible presence of dead layers or polar defects but is dramatically impacted by relatively high densities of space charge. Switching is a strong function of defects as well as the presence of a bottom electrode. The out-of-plane dielectric displacement exhibits a spike during switching of the in-plane polarization in films with bottom electrodes but nearly disappears otherwise. Such an effect during polarization reorientation along the film plane could be tailored as a sensing signal. The hysteresis and domain characteristics as a function of interface conditions and defects are discussed for BaTiO(3) strained on tensile substrates.

Item Type:Article
Uncontrolled Keywords:Ferroelectric thin film devices; Domains; Hysteresis; Thermodynamic modeling
Subjects:Q Science > QC Physics
Q Science > QC Physics > QC176-176.9 Solids. Solid state physics
ID Code:17943
Deposited By:Burç Mısırlıoğlu
Deposited On:04 Jan 2012 11:20
Last Modified:04 Jan 2012 11:20

Repository Staff Only: item control page