Characterization of an embedded RF-MEMS switch
Kaynak, Mehmet and Ehwald, K. E. and Scholz , Rene and Korndörfer, F. and Wipf, C. and Sun, Y. M. and Tillack, B. and Zihir, Samet and Gürbüz, Yaşar (2010) Characterization of an embedded RF-MEMS switch. In: Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF 2010), New Orleans, LA
Official URL: http://dx.doi.org/10.1109/SMIC.2010.5422816
An RF-MEMS capacitive switch for mm-wave integrated circuits, embedded in the BEOL of 0.25μm BiCMOS process, has been characterized. First, a mechanical model based on Finite-Element-Method (FEM) was developed by taking the residual stress of the thin film membrane into account. The pull-in voltage and the capacitance values obtained with the mechanical model agree very well with the measured values. Moreover, S-parameters were extracted using Electromagnetic (EM) solver. The data observed in this way also agree well with the experimental ones measured up to 110GHz. The developed RF model was applied to a transmit/receive (T/R) antenna switch design. The results proved the feasibility of using the FEM model in circuit simulations for the development of RF-MEMS switch embedded, single-chip multi-band RF ICs.
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