title   
  

Realization of a single-chip, SiGe:C-based power amplifier for multi-band WiMAX applications

Kaynak, Mehmet and Tekin, İbrahim and Gürbüz, Yaşar (2010) Realization of a single-chip, SiGe:C-based power amplifier for multi-band WiMAX applications. (Accepted/In Press)

[img]
Preview
PDF (Realization of a Single-Chip, SiGe:C-Based Power Amplifier for Multi-Band WiMAX Applications) - Requires a PDF viewer such as GSview, Xpdf or Adobe Acrobat Reader
641Kb

Abstract

A fully-integrated Multi-Band PA using 0.25 μm SiGe:C process with an output power of above 25 dBm is presented. The behaviour of the amplifier has been optimized for multi-band operation covering, 2.4 GHz, 3.6 GHz and 5.4 GHz (UWB-WiMAX) frequency bands for higher 1-dB compression point and efficiency. Multi-band operation is achieved using multi-stage topology. Parasitic components of active devices are also used as matching components, in turn decreasing the number of matching component. Measurement results of the PA provided the following performance parameters: 1-dB compression point of 20.5 dBm, gain value of 23 dB and efficiency value of %7 operation for the 2.4 GHz band; 1-dB compression point of 25.5 dBm, gain value of 31.5 dB and efficiency value of %17.5 for the 3.6 GHz band; 1-dB compression point of 22.4 dBm, gain value of 24.4 dB and efficiency value of %9.5 for the 5.4 GHz band. Measurement results show that using multi-stage topologies and implementing each parasitic as part of the matching network component has provided a wider-band operation with higher output power levels, above 25 dBm, with SiGe:C process.

Item Type:Article
Uncontrolled Keywords:Power Amplifier, SiGe:C, Multi-Band, WiMAX, UWB, WLAN
Subjects:UNSPECIFIED
ID Code:15853
Deposited By:Yaşar Gürbüz
Deposited On:08 Dec 2010 16:45
Last Modified:08 Dec 2010 16:45

Repository Staff Only: item control page