title   
  

Investigation of the effect of cerium doping on the electrical properties and leakage current behavior of lead zirconate thin films derived by the sol-gel method

Menşur Alkoy, Ebru and Shiosakiy, Tadashi (2009) Investigation of the effect of cerium doping on the electrical properties and leakage current behavior of lead zirconate thin films derived by the sol-gel method. Journal of the American Ceramic Society, 92 (2). pp. 396-404. ISSN 0002-7820

Full text not available from this repository.

Official URL: http://dx.doi.org/10.1111/j.1551-2916.2008.02858.x

Abstract

Undoped and cerium (Ce)-doped (1 and 5 mol%) antiferroelectric thin films were obtained by a sol-gel process. All lead zirconate, PbZrO3 (denoted as PZ), films crystallized in the perovskite phase with a full [111] pseudocubic orientation and with a uniform microstructure. X-ray photoelectron spectroscopic investigations revealed that the oxidation state of Ce is 3+ leading to an A-site donor doping. Ce doping causes a decrease in the dielectric constant from 200 to 155 and an increase in the forward switching fields from 275 to 296 kV/cm. However, it also leads to a significant decrease in the leakage current density and this effect is more pronounced for the 5% doping case, where an order of magnitude lower leakage current is obtained compared with the undoped PZ. Analyses of leakage current behavior indicate dominance of a space charge limited current type leakage current and also a possible contribution from a Poole-Frenkel type emission in certain temperature or field regimes.

Item Type:Article
Subjects:T Technology > TA Engineering (General). Civil engineering (General) > TA401-492 Materials of engineering and construction. Mechanics of materials
ID Code:15042
Deposited By:Ebru Menşur Alkoy
Deposited On:05 Nov 2010 15:27
Last Modified:25 May 2011 14:13

Repository Staff Only: item control page