Investigation of the effect of cerium doping on the electrical properties and leakage current behavior of lead zirconate thin films derived by the sol-gel method
Menşur Alkoy, Ebru and Shiosakiy, Tadashi (2009) Investigation of the effect of cerium doping on the electrical properties and leakage current behavior of lead zirconate thin films derived by the sol-gel method. Journal of the American Ceramic Society, 92 (2). pp. 396-404. ISSN 0002-7820
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Official URL: http://dx.doi.org/10.1111/j.1551-2916.2008.02858.x
Undoped and cerium (Ce)-doped (1 and 5 mol%) antiferroelectric thin films were obtained by a sol-gel process. All lead zirconate, PbZrO3 (denoted as PZ), films crystallized in the perovskite phase with a full  pseudocubic orientation and with a uniform microstructure. X-ray photoelectron spectroscopic investigations revealed that the oxidation state of Ce is 3+ leading to an A-site donor doping. Ce doping causes a decrease in the dielectric constant from 200 to 155 and an increase in the forward switching fields from 275 to 296 kV/cm. However, it also leads to a significant decrease in the leakage current density and this effect is more pronounced for the 5% doping case, where an order of magnitude lower leakage current is obtained compared with the undoped PZ. Analyses of leakage current behavior indicate dominance of a space charge limited current type leakage current and also a possible contribution from a Poole-Frenkel type emission in certain temperature or field regimes.
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