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Chemical analysis of graphene oxide films after heat and chemical treatments by X-ray photoelectron and Micro-Raman spectroscopyDongxing, Yang and Velamakanni, Aruna and Bozoklu, Gülay and Park, Sungjin and Stoller, Meryl and Piner, Richard D. and Stankovich, Sasha and Jung, Inhwa and Field, Daniel A. and Ventrice, Carl A., Jr. and Ruoff, Rodney S. (2009) Chemical analysis of graphene oxide films after heat and chemical treatments by X-ray photoelectron and Micro-Raman spectroscopy. Carbon, 47 (1). pp. 145-152. ISSN 0008-6223 Full text not available from this repository. Official URL: http://dx.doi.org/10.1016/j.carbon.2008.09.045 AbstractSeveral nanometer-thick graphene oxide films deposited on silicon nitride-on silicon substrates were exposed to nine different heat treatments (three in Argon, three in Argon and Hydrogen, and three in ultra-high vacuum), and also a film was held at 70 degrees C while being exposed to a vapor from hydrazine monohydrate. The films were characterized with atomic force microscopy to obtain local thickness and variation in thickness over extended regions. X-ray photoelectron spectroscopy was used to measure significant reduction of the oxygen content of the films; heating in ultra-high vacuum was particularly effective. The overtone region of the Raman spectrum was used, for the first time, to provide a "fingerprint" of changing oxygen content.
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