5 GHz Power Amplifier Design with AMS 0.35 m SiGe BiCMOS Technology for IEEE 802.11a WLAN

Abstract

In this work, a 5 GHz radio frequency power amplifier for 802.11a Wireless LAN applications has been designed in Austria Micro Systems (AMS) 0.35 ´m SiGe BiCMOS (ft =60 GHz) technology. At 5 GHz frequency and 3.3 V supply voltage, output power of 16.364 dBm and power added efficiency (PAE) of 36.819 % are achieved from single discrete SiGe BiCMOS HBT (npn 254H5) with 0.35 ´m emitter width. The output 1 dB compression point at 3.3 V is 11.86 dBm with a PAE of 21 %.