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5 GHz Power Amplifier Design with AMS 0.35 m SiGe BiCMOS Technology for IEEE 802.11a WLAN

Kavlak, Canan and Tekin, İbrahim (2006) 5 GHz Power Amplifier Design with AMS 0.35 m SiGe BiCMOS Technology for IEEE 802.11a WLAN. In: IEEE 14. Sinyal İşleme ve İletişim Uygulamaları Kurultayı, Antalya

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Abstract

In this work, a 5 GHz radio frequency power amplifier for 802.11a Wireless LAN applications has been designed in Austria Micro Systems (AMS) 0.35 ´m SiGe BiCMOS (ft =60 GHz) technology. At 5 GHz frequency and 3.3 V supply voltage, output power of 16.364 dBm and power added efficiency (PAE) of 36.819 % are achieved from single discrete SiGe BiCMOS HBT (npn 254H5) with 0.35 ´m emitter width. The output 1 dB compression point at 3.3 V is 11.86 dBm with a PAE of 21 %.

Item Type:Papers in Conference Proceedings
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
ID Code:1241
Deposited By:İbrahim Tekin
Deposited On:07 Dec 2006 02:00
Last Modified:25 May 2011 14:22

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