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Impact of misfit relaxation and a-domain formation on the electrical properties of tetragonal PbZr0.4Ti0.6O3/PbZr0.2Ti0.8O3 thin film heterostructures: experiment and theoretical approach

Feigl, Ludwig and Mısırlıoğlu, Burç and Vrejoiu, Ionela and Alexe, Marin and Hesse, Dietrich (2009) Impact of misfit relaxation and a-domain formation on the electrical properties of tetragonal PbZr0.4Ti0.6O3/PbZr0.2Ti0.8O3 thin film heterostructures: experiment and theoretical approach. Journal of applied physics, 105 (6). ISSN 0021-8979

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Official URL: http://dx.doi.org/10.1063/1.3056164

Abstract

Heterostructures consisting of PbZr0.2Ti0.8O3 and PbZr0.4Ti0.6O3 epitaxial films on a SrTiO3 (100) substrate with a SrRuO3 bottom electrode were prepared by pulsed laser deposition. By using the additional interface provided by the ferroelectric bilayer structure and changing the sequence of the layers, the content of dislocations and elastic domain types was varied in a controlled manner. The resulting microstructure was investigated by transmission electron microscopy. Macroscopic ferroelectric measurements have shown a large impact of the formation of dislocations and 90° domain walls on the ferroelectric polarization and dielectric constant. A thermodynamic analysis using the Landau–Ginzburg–Devonshire approach that takes into account the ratio of the thicknesses of the two ferroelectric layers and electrostatic coupling is used to shed light on the experimental data.

Item Type:Article
Uncontrolled Keywords:crystal microstructure; dielectric polarisation; dislocations; electric domains; ferroelectric materials; ferroelectric thin films; lead compounds; permittivity; pulsed laser deposition; strontium compounds; transmission electron microscopy; zirconium compounds
Subjects:Q Science > QC Physics
ID Code:11485
Deposited By:Burç Mısırlıoğlu
Deposited On:14 May 2009 16:12
Last Modified:14 May 2009 16:12

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