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Realization of a Single-Chip, SiGe:C-Based Power Amplifier for Multi-Band WiMAX Applications

Kaynak, Mehmet and Gürbüz, Yaşar (2008) Realization of a Single-Chip, SiGe:C-Based Power Amplifier for Multi-Band WiMAX Applications. (Submitted)

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Abstract

A fully-integrated Multi-Band PA using 0.25 μm SiGe:C process with an output power of above 25 dBm is presented. The behavior of the amplifier has been optimized for multi-band operation covering, 2.4 GHz, 3.6 GHz and 5.4 GHz (UWB-WiMAX) frequency bands for higher 1-dB compression point and efficiency. Multi-band operation is achieved using multi-stage topology. Parasitic components of active devices are also used as matching components, in turn decreasing the number of matching component. Measurement results of the PA provided the following performance parameters: 1-dB compression point of 20.5 dBm, gain value of 23 dB and efficiency value of %7 operation for the 2.4 GHz band; 1-dB compression point of 25.5 dBm, gain value of 31.5 dB and efficiency value of %17.5 for the 3.6 GHz band; 1-dB compression point of 22.4 dBm, gain value of 24.4 dB and efficiency value of %9.5 for the 5.4 GHz band. Measurement results show that using multi-stage topologies and implementing each parasitic as part of the matching network component has provided a wider-band operation with higher output power levels, above 25 dBm, with SiGe:C process.

Item Type:Article
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering > TK7800-8360 Electronics
ID Code:10437
Deposited By:Yaşar Gürbüz
Deposited On:10 Nov 2008 15:11
Last Modified:13 Apr 2009 14:58

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