Imaging Capability of PHEMT, GaN/AlGaN and Si Micro Hall Probes for Scanning Hall Probe Microscopy between 25°C-125°C

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Oral, Ahmet (2008) Imaging Capability of PHEMT, GaN/AlGaN and Si Micro Hall Probes for Scanning Hall Probe Microscopy between 25°C-125°C. (Accepted/In Press)

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Item Type:	Article
Subjects:	Q Science > QC Physics
Divisions:	Center for Individual and Academic Development Human Resources Research and Graduate Policies President's Office Faculty of Engineering and Natural Sciences
Depositing User:	Ahmet Oral
Date Deposited:	07 Nov 2008 16:21
Last Modified:	19 Jul 2019 16:04
URI:	https://research.sabanciuniv.edu/id/eprint/10168

Available Versions of this Item

Imaging Capability of PHEMT, GaN/AlGaN and Si Micro Hall Probes for Scanning Hall Probe Microscopy between 25°C-125°C. (deposited 07 Nov 2008 16:21) [Currently Displayed]
- Imaging Capability of PHEMT, GaN/AlGaN and Si Micro Hall Probes for Scanning Hall Probe Microscopy between 25°C-125°C. (deposited 10 Nov 2008 15:13)
  - Imaging capability of pseudomorphic high electron mobility transistors, AlGaN/GaN, and Si micro-Hall probes for scanning Hall probe microscopy between 25 and 125°C. (deposited 08 Apr 2009 10:44)

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