Design of a 4.2-5.4 GHz Differential LC VCO Using 0.35m SiGe BiCMOS Technology for IEEE 802.11a Applications

Abstract

In this paper, a 4.2-5.4 GHz, Gm LC voltage controlled oscillator (VCO) for IEEE 802.11a standard is presented. The circuit is designed with AMS 0.35m SiGe BiCMOS process that includes high-speed SiGe Heterojunction Bipolar Transistors (HBTs). According to post-layout simulation results, phase noise is -110.7 dBc/Hz at 1MHz offset from 5.4 GHz carrier frequency and -113.4 dBc/Hz from 4.2 GHz carrier frequency. A linear, 1200 MHz tuning range is obtained from the simulations, utilizing accumulation-mode varactors. Phase noise was also found to be relatively low due to taking the advantage of differential tuning concept. Output power of the fundamental frequency changes between 4.8 dBm and 5.5 dBm depending on the tuning voltage. Based on the simulation results, the circuit draws 2 mA without buffers and 14.5 mA from 2.5 V supply including buffer circuits leading to a total power dissipation of 36.25 mW. The circuit layout occupies an area of 0.6 mm2 on Si substrate, including DC and RF pads.

Available Versions of this Item

• Design of a 4.2-5.4 GHz Differential LC VCO Using 0.35m SiGe BiCMOS Technology for IEEE 802.11a Applications. (deposited 16 Feb 2007 02:00) [Currently Displayed]
  • Design of a 4.2–5.4 GHz differential LC VCO using 0.35 lm SiGe BiCMOS technology for IEEE 802.11a applications. (deposited 23 Oct 2007 16:09)